Photodiode hamamatsu datasheet

Photodiode hamamatsu datasheet. 9 × 1. 7 μm. Measurement condition. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S5971 on GoPhotonics Photosensitive area: 5. Get product specifications, Download the Datasheet, Request a Quote and get pricing for G12430-046D on GoPhotonics InGaAs photodiodes I 2 C-compatible InGaAs photodiodes InGaAs photodiode arrays InGaAs APDs InAs photovoltaic detectors InSb photovoltaic detectors InAsSb photovoltaic detectors InAsSb photovoltaic detector arrays Type II superlattice infrared detector Quantum cascade photodetector Thermopile detectors Two color detectors Si PIN photodiodes S3590 series arge area Si PIN photodiodes www. A wide range of spectrum can be detected with a single detector. The premolded package is designed to block stray light from the side and back of the package to reaching the photosensitive area. - Visible to near infrared range. 9 A/W typ. These are full compatible with R928 and same accessories such as socket assembly can be used as well. S5106 - Photodiode from Hamamatsu Photonics. Si photodiode arrays. com 1 Features Surface mount type ceramic chip carrier package Compatible with lead-free solder reflow High sensitivity Packing Tray: S5980, S5981, S5870 Reel: S5980-10, S5981-10, S5870-10 Applications Laser optical axis alignment Level meter S1226-8BQ - Photodiode from Hamamatsu Photonics. 5 G12183-010K ϕ1 G12183-020K (2)/K TO-5 ϕ2 G12183-030K ϕ3 G12183-103K (3)/K TO-8 The S6967 is a Si PIN photodiode with large photosensitive area, molded into a clear plastic SIP for detecting visible to near infrared range. Get product specifications, Download the Datasheet, Request a Quote and get pricing for G8370-82 on GoPhotonics France: Hamamatsu Photonics France S. 5 mm. 1 mm. ) 30 V. Features-Quadrant (2 × 2) element format-Low cross-talk: 2% max. Hamamatsu Corporation. 5 A/W. 3 V For UV to visible, precision photometry; suppressed near IR sensitivity. - Spherical lens window with AR coating minimizes return light input. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S1336-5BK on GoPhotonics Features- Low noise, low dark current- Low terminal capacitance- Photosensitive area: φ0. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off Large photosensitive area Si PIN photodiode. Structure Absolute maximum ratings (Ta=25 °C) Electrical and optical characteristics (Ta=25 °C, per 1 element) Low noise High reliability Photosensitive area G6849 : f2 mm quadrant element G6849-01: f1 mm quadrant element Light spot position detection Measurement equipment. - Package weldable by YAG laser. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S1226-5BK on GoPhotonics S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for detecting visible to near infrared range or near infrared range only. 1 mm-High-speed response: 60 MHz (VR=100 V) G12183-210KA-03 - Photodiode from Hamamatsu Photonics. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S1226-44BK on GoPhotonics S1226-8BK. -High-speed response: 100 MHz (V R =10 V) -Low price. Features- Photosensitive area: φ0. Hamamatsu also provides E2573 BNC-BNC coaxial cable (length: 1 m) as an option. G13176-003P - Photodiode from Hamamatsu Photonics. The company was founded in 1953 in Hamamatsu, Japan, and has since become a global leader in the optoelectronics Price. Silicon photodiode array is a sensor with multiple Si photodiodes arranged in a single package. Features- With UV glass window (hermetically sealed)- High sensitivity in UV region- High Silicon photodiode array is a sensor with multiple Si photodiodes arranged in a single package. Our products include optical sensors and components, cameras, light & radiation sources, lasers, and customized solutions. Notice. Photodiode by Hamamatsu Photonics. 2 mm- Low voltage operation- Low capacitance- High Features- High UV sensitivity: QE＝75 % (λ=200 nm)- Suppressed near IR sensitivity- Low dark current- High reliability Si strip detector. : 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax Si PIN photodiodes S5980/S5981/S5870 series Surface mountable segmented type Si photodiode www. 26. These Si PIN photodiodes feature a high sensitivity, a high-speed response and large active areas. S1087/S1133 series are ceramic package photodiodes that offer low dark current. Features- Visible to near infrared range- High sensitivity- High-speed response- Plastic package: 7 × 7. 8 mm Silicon photomultiplier (SiPM) is a photodetector with many attractive attributes such as very high intrinsic gain, immunity to electromagnetic fields, or low bias voltage. S1226-5BQ - Photodiode from Hamamatsu Photonics. com 1 Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material*1 Package Cooling Photosensitive area (mm) G12183-003K (1)/K TO-18 Non-cooled ϕ0. - Low dark current: 20 pA typ. ) 1. pdf. 8 mm- Photosensitive area size: 5. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light The S2281 is a Si photodiode sealed in a metal package with a BNC connector. Photosensitivity (typ. 3 G12183-005K ϕ0. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S5973-01 on GoPhotonics S1226-44BK - Photodiode from Hamamatsu Photonics. - Low dark current. Cooling. This device incorporates a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pigtail module. Since their sensitivity is switchable between two ranges (High/Low), highly accurate output can be obtained by selecting theproper sensitivity range Large-area Si PIN photodiodes. 5 μm to 1. FAQs. 77 × 2. About Hamamatsu Corporation. Delivery. The minute difference in light levels is treated as a S1226-5BK - Photodiode from Hamamatsu Photonics. An SSD is a Si photodiode array with strips of photosensitive areas (PN junctions) with a width ranging from several micrometers to several tens of micrometers formed on a substrate. Features. Features- High-speed response- High gain with AGC (Auto Gain Control)- Low power supply voltage: 3. 9 μm to 1. com 1 Structure Type no. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. G9801-22 - Photodiode from Hamamatsu Photonics. G1962 manufactured by: GaP photodiode. -Sensitivity matching with blue scintillator (LSO, GSO, etc. Get product specifications, Download the Datasheet, Request a Quote and get pricing for G9801-22 on GoPhotonics The S14605 is an unsealed type large large-area Si PIN photodiode for direct radiation detection. Photodiode array circuits. 26 mmt-Photo sensitivity: 0. 1 mm: Number of elements: 1: Package: Ceramic: Cooling: Non-cooled: Reverse voltage (max. , Photosensitivity: λ=780 nm, Dark current: V R =20 V, Cutoff frequency: V R =20 V, Terminal capacitance: V R =20 V, f=1 MHz, Noise equivalent power: V R =20 V, λ=λp, unless otherwise noted. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S16008-33 on GoPhotonics S5971 - Photodiode from Hamamatsu Photonics. -Depletion layer: 0. - High sensitivity in visible to near infrared range. Related documents. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S1226-8BQ on GoPhotonics Plastic SIP (single in-line package) S2506-02 is a Si PIN photodiode with large active areas, molded into a clear plastic SIP for detecting visible to near infrared range. ) 0. Datasheet: Description: Hamamatsu Corporation: S6036: 89Kb / 2P: Si PIN photodiode 7 mm lens plastic package S2721-02: 113Kb / 3P: Si PIN photodiode Dual-element, plastic package photodiode S2506: 107Kb / 2P: Si PIN photodiode Plastic SIP (Single In-line Package) S1787: 141Kb / 2P: Si photodiode Plastic package photodiode with low dark current G8370-82 - Photodiode from Hamamatsu Photonics. Please click the part number to find more details. 5 mm- Low noise About Hamamatsu Corporation. -High reliability. The company was founded in 1953 in Hamamatsu, Japan, and has since become a global leader in the optoelectronics S1227-1010BR - Photodiode from Hamamatsu Photonics. Dimensional outline (unit: mm) Related documents. The G10899-01K is an InGaAs PIN photodiode that covers a wide spectral response range from 0. ) 20 pF. The company was founded in 1953 in Hamamatsu, Japan, and has since become a global leader in the optoelectronics S16008-33 - Photodiode from Hamamatsu Photonics. 6 µm) www. Noise equivalent power (typ. The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. For visible to near IR, general-purpose photometry. S16392-01CT - Photodiode from Hamamatsu Photonics. Other applications include POS scanners, power meters and analytical instruments. -Good energy resolution. The photodiodes are connected in a direction that cancels out the photocurrent of each photodiode. PSD modules contain a high-precision two-dimensional PSD (position sensitive detector) or a 4-segment Si photodiode and a low-noise amplifier, and are able to perform accurate distance measurement. -High quantum efficiency. It can detect incident positions of high energy particles at the micron level. ) Features- Low noise, low dark current- Low terminal capacitance- Photosensitive area: φ1 mm- Low noise Photosensitive area: 10 × 10 mm: Number of elements: 1: Package: Ceramic: Cooling: Non-cooled: Reverse voltage (max. Features- Visible-cut- High sensitivity- High-speed response- Large active area- Plastic package: 7 × 7. Datasheet 239 KB/PDF. uadrant type. 7 μm, the G10899-01K has sensitivity extending to 0. - Plastic package: 7 × 7. 3×10 -14 W/Hz 1/2. Datasheet 864 KB/PDF. 3/1. Spectral response range. 58 A/W. G6849 series. Other. 162 kb. Datasheet 348 KB/PDF. ) 30 pA. Datasheet 762 KB/PDF. Peak Wavelength. Reverse voltage (max. Features-Large photosensitive area: 5 × 5 mm-Chip carrier package suitable for surface mounting-Thin package: 1. 55 μm band power monitor in opticalfiber communications. This Si PIN photodiode features high sensitivity, high-speed response and large photosensitive area. View G1962 to our catalog. The company was founded in 1953 in Hamamatsu, Japan, and has since become a global leader in the optoelectronics S3071 - Photodiode from Hamamatsu Photonics. 10 V. - High sensitivity: 0. 190 to 1100 nm. Features-Quartz glass window-High UV sensitivity-Large photosensitive area: φ4. S3883 - Photodiode from Hamamatsu Photonics. - S16765-01MS: For v isible to near IR range. This photodiode has a large photosensitive area, making it suitable for spatial light transmission where a wide field-of-view angle is required. Support. Download Datasheet Request Quote. 8 mm. Integrates a 2-PSD for precision photometry or a 4-segment Si photodiode with low-noise amp in a compact case. 8 mm- Large photosensitive area: 5. - S16838-01MS: For visible range. Get product specifications, Download the Datasheet, Request a Quote and get pricing for G12183-210KA-03 on GoPhotonics S8729 - Photodiode from Hamamatsu Photonics. (λ=1. The output from these photodiode modules is an analog voltage and can be easily checked with a voltmeter, etc. G1961. Si strip detector. Custom order. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S2386-44K on GoPhotonics Hamamatsu Photonics has developed a UV-sensitive model of “mini-spectrometer micro series” that offer high sensitivity, fingertip size and low cost New high-speed InGaAs area image sensor with a wider dynamic range, and increased speed and accuracy for plastic sorting and similar applications The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4. Features-High sensitivity-Uniform The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. Download G1962 datasheet from. Non-cooled. - High reliability. Features-High-speed response-Wide spectral response-Low dark current-Low terminal capacitance. G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. S2386-5K - Photodiode from Hamamatsu Photonics. S1133-01 Product details. 2 mm, G8931-20 provides high-speed response (typical cut-off frequency 0. 48 A/W. Peak sensitivity wavelength (typ. 31 μm)- Low capacitance: 1 pF typ. Get product specifications, Download the Datasheet, Request a Quote and get pricing for G13176-003P on GoPhotonics S1133-14 Product details. Filter bandwidth is matched with 850 nm to 950 nm IR emitters. Datasheet 659 KB/PDF. The S6775-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. Ceramic package used is light-impervious, so no stray light can reach the active area from the side or backside. The S3590-18/19 are violet sensitivity enhanced type and the S3590-19 is an unsealed type. 55 μm band optical fiber communications. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S1227-1010BR on GoPhotonics . Price. For UV to visible, precision photometry; suppressed near IR sensitivity. Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S6967 on GoPhotonics Here are our recommendations for the photomultiplier tubes with higher sensitivity than R928. The large photosensitive area makes the S2281 well suited for optical power meters. Features- High-speed response: 2 GHz typ. More details for S13993 can be seen below. This configuration cancels out the common mode noise of the two incident light rays. Ta=25 ℃, Typ. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light S2386-44K - Photodiode from Hamamatsu Photonics. It can be used in a wide range of applications such as light position detection, imaging, and spectrophotometry. Despite its large active area of φ0. ) 5 V: Spectral response range: 340 to 1100 nm S6967 - Photodiode from Hamamatsu Photonics. S9345 - Photodiode from Hamamatsu Photonics. ) -Bare chip type (unsealed) -High quantum efficiency. 5 V. The S5821 provides high performance and reliability at a low cost. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S3071 on GoPhotonics The S5106 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. 5 × 4. ) 10 pA. -Low capacitance. ) 20 pA. 8 mm The S3096-02 is a dual-element Si PIN photodiode molded into plastic package. While standard InGaAs PIN photodiodes have spectral response ranging from 0. -High-speed response. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S2386-5K on GoPhotonics 3 Si PIN photodiodes S5821 series 10 MHz 1 MHz 100 MHz 1 GHz 1 10 100 (Typ. Datasheet 408 KB/PDF. Type No. hamamatsu. The S5821 is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S5106 on GoPhotonics G12430-046D - Photodiode from Hamamatsu Photonics. 1. 9 GHz at M=10). This device incorporates a high-speed, high-sensitivity InGaAs PIN photodiode integrated with a high-speed preamp, allowing easy connection to a latter-stage circuit. -High stability. Using quartz glass as thelight input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical powermeters. - Superior linearity. Features-46-element array-Designed for simple measurement-Large photosensitive area size The official website of Hamamatsu Corporation whose mission is to advance science and industry through photonic technologies. - High UV sensitivity: QE＝75 % (λ=200 nm) - Suppressed near IR sensitivity. A quadrant element format allows position sensing such as for laser beam axis alignment. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S8729 on GoPhotonics For UV to IR, precision photometry. InGaAs PIN photodiodes. A. - CD package. ) 960 nm. Please feel free to contact our sales office. Features-Large photosensitive area: 10 × 10 mm-Chip carrier package suitable for surface mounting-Thin package: 1. 72 A/W (λ=960 nm)-Packing Tray: S5980 Reel: S5980-10. -High UV sensitivity: QE 75% (λ=200 nm) -Low capacitance. Terminal capacitance (typ. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier. The S5971 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. Features-Photosensitive area: 5 × 5 G1962 datasheet. 46-element InGaAs array. Specifications. com. L. The G10899-01K also features low noise and S5973-01 - Photodiode from Hamamatsu Photonics. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S12109-32 on GoPhotonics InAsSb photovoltaic detectors deliver high sensitivity within 5 μm, 8 μm, and 11 μm. - S16838/S16840-02MS: For visible to IR range. Window material Photosensitive area (mm) Depletion layer thickness (mm) Absolute maximum ratings Reverse Power voltage VR max (V) dissipation P (mW) Operating temperature* Topr (°C) Storage Tstg (°C) S3590-08 Epoxy resin InGaAs photodiodes I 2 C-compatible InGaAs photodiodes InGaAs photodiode arrays InGaAs APDs InAs photovoltaic detectors InSb photovoltaic detectors InAsSb photovoltaic detectors InAsSb photovoltaic detector arrays Type II superlattice infrared detector Quantum cascade photodetector Thermopile detectors Two color detectors InGaAs PIN photodiodes seres Long wavelength type (cutoff wavelength: 2. Cooled and uncooled options are available, as well as metal and ceramic on-board packages. Features- Metal package with BNC connector- High sensitivity- High C10443 series. -High energy resolution. 320 to 1100 nm. More details for S1226-8BK can be seen below. Hamamatsu Corporation is a Japanese company that specializes in the development and manufacture of optoelectronic and photonic devices, including photomultiplier tubes, image sensors, and light sources. Segmented Si photodiodes. Silicon PIN Photodiode DESCRIPTION BPV10NF is a PIN photodiode with high speed and high sensitivity in black, T-1¾ plastic package with daylight blocking filter. Ta=25 °C, λ=830 nm, RL=50 Ω) Reverse voltage (V) Cutoff frequency 1 pA 1 nA 10 pA 100 pA S2506-02 - Photodiode from Hamamatsu Photonics. - Photosensitive area size: 2. R. - Easy optical axis alignment. The G8195-12 is a high-speed receiver specifically developed for 1. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S3883 on GoPhotonics About Hamamatsu Corporation. The S13993 from Hamamatsu Photonics is a Photodiode with Wavelength Range 780 nm, Capacitance 40 to 60 pF, Dark Current 2 to 6 pA. 77 mm. It can detect high-energy radiation with high efficiency. The S8650 is a type in which the epoxy resin surface is processed flat to improve coupling with the scintillator. 72 A/W (λ=960 nm)-Packing Tray: S5870 Reel: S5870-10. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S1226-5BQ on GoPhotonics C12668-01 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. - High fiber coupling efficiency. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S16392-01CT on GoPhotonics About Hamamatsu Corporation. ) 720 nm. 5 μm on the shorter wavelength side. -Wide spectral response range: 190 to 1000 nm-High-speed response: fc=20 MHz-TO-5 metal package. 55 to 2. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S2506-02 on GoPhotonics Datasheet 784 KB/PDF. Due to its novel status, a full awareness of the detector’s opto-electronic characteristics, modes of operation, and suitable applications is still lacking. Spectral response. These are photosensors for high energy physics, mainly used with a scintillator being coupled. ) 5 V: Spectral response range: 340 to 1000 nm Spherical lens window package for efficient fiber coupling. Product lineup. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Datasheet 924 KB/PDF. S12109-32 - Photodiode from Hamamatsu Photonics. They exhibit low sensitivity deterioration under UV light irradiation and are suitable for applications such as monitoring intense UV light sources. www. Specifications; Spectral response; Dimensional outline (unit: mm) Related documents; You're headed to Hamamatsu Photonics website for US S1336-5BK - Photodiode from Hamamatsu Photonics. The C10439 series photodiode modules are high-precision photodetectors that integrate a photodiode and a current-to-voltageamplifi er. Dark current (max. 320 to 1000 nm. The S1226-8BK from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1000 nm, Capacitance 1200 pF, Dark Current 20 pA, Rise Time 2 µs. Get product specifications, Download the Datasheet, Request a Quote and get pricing for S9345 on GoPhotonics G9820 is a family of high-speed receivers specifically developed for 1. xi ia di wp yy cs pm qq rq tf